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BLA6H0912-500,112

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BLA6H0912-500,112

Transistor Polarity : N-Channel

Technology : Si

Product Category : RF MOSFET Transistors

Mounting Style : SMD/SMT

Gain : 17 dB

Output Power : 450 W

Package / Case : SOT-634A-3

Maximum Operating Temperature : + 150 C

Vds - Drain-Source Breakdown Voltage : 100 V

Packaging : Tube

Id - Continuous Drain Current : 54 A

Rds On - Drain-Source Resistance : 85 mOhms

Manufacturer : NXP Semiconductors

Description : RF MOSFET Transistors TRANS RADAR PWR LDMOS

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The BLA6H0912-500,112,from NXP Semiconductors,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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