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Transistor Polarity : N-Channel
Technology : GaAs
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 17.7 dB
Transistor Type : EpHEMT
Pd - Power Dissipation : 270 mW
Package / Case : SOT-343
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 5 V
Packaging : Reel
Id - Continuous Drain Current : 100 mA
Vgs - Gate-Source Breakdown Voltage : - 5 V to 1 V
Manufacturer : Avago / Broadcom
Description : RF JFET Transistors Transistor GaAs Single Voltage
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