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SIHP35N60E-BE3

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RTD (Resistance Temperature Detector) [1000]
Thermocouples, Temperature Probes [1083]
Thermostats - Mechanical [883]
Thermostats - Mechanical - Industrial [789]
Thermostats - Solid State [1012]

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SIHP35N60E-BE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs : 132 nC @ 10 V

Product Status : Active

Mounting Type : Through Hole

Package : Tube

Input Capacitance (Ciss) (Max) @ Vds : 2760 pF @ 100 V

Series : E

Vgs (Max) : ±30V

Vgs(th) (Max) @ Id : 4V @ 250µA

Supplier Device Package : TO-220AB

Rds On (Max) @ Id, Vgs : 94mOhm @ 17A, 10V

Mfr : Vishay Siliconix

Operating Temperature : -55°C ~ 150°C (TJ)

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Power Dissipation (Max) : 250W (Tc)

Package / Case : TO-220-3

Drain to Source Voltage (Vdss) : 600 V

Current - Continuous Drain (Id) @ 25°C : 32A (Tc)

Technology : MOSFET (Metal Oxide)

FET Feature : -

Description : N-CHANNEL 600V

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N-Channel 600 V 32A (Tc) 250W (Tc) Through Hole TO-220AB

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